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  CHX2192 rohs compliant ref.: dsCHX21920204 - 23 jul 10 1/6 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 30-60ghz frequency multiplier gaas monolithic microwave ic description the CHX2192 is a by 2 frequency multiplier monolithic circuit. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounded. this simplifies the assembly process. the circuit is manufactured with a phemt process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features broadband performance: 27-33ghz 11dbm output power for +12dbm input dc consumption 130ma @ 3.5v (rf) chip size: 2.12x1.11x0.10mm -32 -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 25 27 29 31 33 35 frequency (ghz) output power (dbm) pout@fin pout@2fin main characteristics tamb.=25c symbol parameter min typ max unit fin input frequency range 27 33 ghz fout output frequency range 54 66 ghz pin input power 12 dbm pout output power for +12dbm input power 8 11 13 db m caution: electrostatic discharge sensitive device. observe handling precautions!
CHX2192 30- 60ghz frequency multiplier ref.: dsCHX21920204 - 23 jul 10 2/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 electrical characteristics tamb=+25c, vd=3.5v, vg1=-0.9v, vg2 adjusted for id =130ma under rf symbol parameter min typ max unit fin input frequency range 27 33 ghz fout output frequency range 54 66 ghz pin input power 12 dbm pout output power for +12 dbm input power 8 11 13 d bm is/fo fin level at the output ( 27 < fin < 33ghz ), for +12dbm input power -30 -15 -10 dbm vswrin input vswr 2.5:1 vswrout output vswr 2.5:1 id bias current 130 ma a wire bond of typically 0.1 to 0.15nh will improve the input and output matching. absolute maximum ratings (1) tamb=+25c symbol parameter values unit vd drain bias voltage 4.0 v id drain bias current 150 ma ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of device above anyone of these param eters may cause permanent damage.
30-60ghz frequency multiplier CHX2192 ref.: dsCHX21920204 - 23 jul 10 3/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical on wafer measurements tamb=+25c. bias conditions: vd=3.5v vg1=-0.9v, vg2 adjusted for id=130ma under rf -32 -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 25 27 29 31 33 35 frequency (ghz) output power (dbm) pout@fin pout@2fin
CHX2192 30- 60ghz frequency multiplier ref.: dsCHX21920204 - 23 jul 10 4/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 chip assembly and mechanical data note: supply feed should be capacitively bypassed. 25 m m diameter gold wire is to be prefered.
30-60ghz frequency multiplier CHX2192 ref.: dsCHX21920204 - 23 jul 10 5/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 chip assembly and mechanical data bonding pad positions (chip thickness: 100m. all dimensions are in micro meters)
CHX2192 30- 60ghz frequency multiplier ref.: dsCHX21920204 - 23 jul 10 6/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s products. ordering information chip form: CHX2192-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.


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